Deposition of transition metal carbides
AssigneeASM Microchemistry Oy
InventorsKai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
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Abstract
The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.
Claims29
A method of forming a thin film, comprising depositing a transition metal carbide thin film by an atomic layer deposition (ALD) process.
A method of producing an electron conductor in an integrated circuit by an atomic layer deposition (ALD) process, in which each of a plurality of cycles comprises exposing an adsorbed transition metal complex on a substrate to a carbon compound, the carbon compound reacting with the adsorbed transition metal complex to form no more than about one monolayer of transition metal carbide.
Dependencies are inferred from the claim text.