IC substrate noise modeling including extracted capacitance for improved accuracy

A method for performing surface modeling of a substrate for the purpose of characterizing the substrate, comprising:

• receiving a doping profile;
• ascertaining a junction curve from said doping profile, said junction curve representing a series of points disposed at about the transition region between a well and a bulk of said substrate;
• and
• calculating a set of parameters α, β, and γ for a given point of said series of points, said set of parameters α, β, and γ characterizing a junction at about said given point, wherein said set of parameters α, β, and γ, when subsequently calculated in view of an input bias voltage, yields a capacitance value for said junction at said given point to facilitate usage of said capacitance in modeling said substrate.

A method for performing surface modeling of a substrate for the purpose of characterizing the substrate, comprising:

• receiving a doping profile;
• ascertaining a transition region from said doping profile, said transition region representing a series of points between a well and a bulk of said substrate;
• and
• calculating a set of parameters α, β, and γ for one or more points of said series of points, said set of parameters α, β, and γ characterizing a junction at about said given point, wherein said set of parameters α, β, and γ, when subsequently calculated in view of an input bias voltage, yields a capacitance value for said junction at said given point to facilitate usage of said capacitance in modeling said substrate.

A computer readable medium for performing surface modeling of a substrate for the purpose of characterizing the substrate, comprising the following instructions:

• instructions for receiving a 2-D doping profile;
• instructions for ascertaining a junction curve from said 2-D doping profile, said junction curve representing a series of points disposed at about the transition region between a well and a bulk of said substrate;
• and
• instructions for calculating a set of parameters α, β, and γ for a given point of said series of points, said given set of parameters α, β, and γ characterizing a junction at about said given point, wherein said given set of parameters α, β, and γ, when subsequently calculated in view of an input bias voltage, yields a capacitance value for said junction at said given point to facilitate usage of said capacitance in modeling said substrate.

An apparatus for performing surface modeling of a substrate for the purpose of characterizing the substrate, comprising:

• a processor;
• and
• a memory, at least one of the processor and the memory being adapted for:
• receiving a 2-D doping profile;
• ascertaining a junction curve from said 2-D doping profile, said junction curve representing a series of points disposed at the transition region between a well and a bulk of said substrate;
• and
• calculating a set of parameters α, β, and γ for a given point of said series of points, said given set of parameters α, β, and γ characterizing a junction at about said given point, wherein said given set of parameters α, β, and γ, when subsequently calculated in view of an input bias voltage, yields a capacitance value for said junction at about said given point to facilitate usage of said capacitance in modeling said substrate.

A computer readable medium for performing surface modeling of a substrate for the purpose of characterizing the substrate, comprising the following instructions:

• instructions for receiving a doping profile;
• instructions for ascertaining a junction curve from said doping profile, said junction curve representing a series of points disposed at the transition region between a well and a bulk of said substrate;
• and
• instructions for calculating a set of parameters α, β, and γ for a given point of said series of points, said set of parameters α, β, and γ characterizing a junction at about said given point, wherein said set of parameters α, β, and γ, when subsequently calculated in view of an input bias voltage, yields a capacitance value for said junction at about said given point to facilitate usage of said capacitance in modeling said substrate.

An apparatus for performing surface modeling of a substrate for the purpose of characterizing the substrate, comprising:

• a processor;
• and
• a memory, at least one of the processor and the memory being adapted for:
• receiving a doping profile;
• ascertaining a junction curve from said doping profile, said junction curve representing a series of points disposed at the transition region between a well and a bulk of said substrate;
• and
• calculating a set of parameters α, β, and γ for a given point of said series of points, said set of parameters α, β, and γ characterizing a junction at about said given point, wherein said set of parameters α, β, and γ, when subsequently calculated in view of an input bias voltage, yields a capacitance value for said junction at about said given point to facilitate usage of said capacitance in modeling said substrate.

A computer readable medium for performing surface modeling of a substrate for the purpose of characterizing the substrate, comprising the following instructions:

• instructions for receiving a doping profile;
• instructions for ascertaining a transition region from said doping profile, said transition region representing a series of points between a well and a bulk of said substrate;
• and
• instructions for calculating a set of parameters α, β, and γ for one or more points of said series of points, said set of parameters α, β, and γ characterizing a junction at said given point, wherein said set of parameters α, β, and γ, when subsequently calculated in view of an input bias voltage, yields a capacitance value for said junction at about said given point to facilitate usage of said capacitance in modeling said substrate.

An apparatus for performing surface modeling of a substrate for the purpose of characterizing the substrate, comprising:

• a processor;
• and
• a memory, at least one of the processor and the memory being adapted for:
• receiving a doping profile;
• ascertaining a transition region from said doping profile, said transition region representing a series of points between a well and a bulk of said substrate;
• and
• calculating a set of parameters α, β, and γ for one or more points of said series of points, said set of parameters α, β, and γ characterizing a junction at said given point, wherein said set of parameters α, β, and γ, when subsequently calculated in view of an input bias voltage, yields a capacitance value for said junction at about said given point to facilitate usage of said capacitance in modeling said substrate.