Aluminum-free vertical cavity surface emitting lasers (VCSELs)
AssigneeMP Technologies, LLC
InventorManijeh Razeghi
Life of this patent
Estimating the term…
Abstract
An A1-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.
Claims14
VCSEL comprising a distributed Bragg reflector and an active layer of 36 periods, formed of Aluminum free material in a superlattice structure.
A VCSEL comprising a distributed Bragg reflector, formed of Aluminum free material, said VCSEL having an active layer of up to 36 periods of InGaP/GaAs in a superlattice structure, said structure being adjacent a layer of GaInp on a substrate, said superlattice comprising alternating layers of GaAs at 69 nm and layer of GaInP at 76 nm.
A vertical cavity surface emitting laser comprising a plurality of spaced and discrete mesas, each having a first n-type distributed Bragg reflector on a GaAs layer, in an active layer comprising a superlattice of InAs/GaAs, followed by a second p-type distributed Bragg reflector having up to 36 periods of alternating layers of GaAs and GaInP.
Dependencies are inferred from the claim text.