Surface semiconductor optical amplifier with transparent substrate

A surface-type light amplifier device having a light amplification section comprising:

• a p-type semiconductor layer;
• a n-type semiconductor layer;
• and
• an active layer sandwiched between the p-type semiconductor layer and the n-type semiconductor layer for producing excited carriers and emits a light beam in a direction rising at a specific angle relative to a surface of a support substrate, wherein
• said n-type semiconductor layer is attached to a transparent substrate different from a substrate for fabricating said light amplification section,
• said n-type semiconductor layer serves as a n-type semiconductor cladding layer and said p-type semiconductor layer serves as a p-type semiconductor multilayer reflecting mirror,
• said light amplification section is attached to said transparent substrate on a side of said ntype semiconductor cladding layer, and
• a light beam emitted from said active layer is transmitted through said transparent substrate.