Redundant circuit for memory device
AssigneeWinbond Electronics Corp.
InventorsHua Zheng, Jae-Hyeong Kim
Life of this patent
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AssigneeWinbond Electronics Corp.
InventorsHua Zheng, Jae-Hyeong Kim
Estimating the term…
A redundant circuit that includes a combination of fuses and anti-fuses, and which may be used during various phases of the manufacturing process (e.g., during wafer test or final test) to replace a defective circuit. The redundant circuit includes (1) a replacement circuit (e.g., a redundant memory cell) that is configurable to replace a defective circuit, and (2) supporting circuitry for the replacement circuit. The support circuit is configurable to provide a control signal (e.g., to activate a word line) for the replacement circuit and further includes at least one fuse and at least one anti-fuse. The fuses or anti-fuses may be programmed to provide a programmed value (e.g., a programmed address) for the replacement circuit. The redundant circuit can be efficiently fabricated within a memory device, and may also be used for other circuits and applications.
A redundant circuit comprising:
A redundant circuit comprising:
A redundant circuit for a memory device, comprising:
A dynamic random access memory (DRAM) device comprising a plurality of redundant circuits, each redundant circuit including
A method for programming a replacement circuit to replace a defective circuit, the method comprising:
A method for replacing a defective circuit with a replacement circuit, the method comprising:
Dependencies are inferred from the claim text.