Magnetization control method, information storage method, magnetic functional device, and information storage device

A magnetic functional device comprising:

• a structure including a potential barrier region placed in direct or indirect contact with a region including a magnetic element, said region containing a magnetic element having a multi-layered structure comprising a plurality of ferromagnetic metal layers:
• separated by a non-magnetic metal intermediate layer, and said potential barrier region being a potential barrier layer formed along an interface thereof with a semiconductor layer located outside said multi-layered structure in the stacking direction thereof, wherein
• relative placement of magnetization of said ferromagnetic metal layers within said region including a magnetic element is controlled by controlling at least one of the height and width of the potential barrier of said potential barrier layer by applying an electric field to said potential barrier layer.

An information storage device comprising:

• a structure including a potential barrier region placed in direct or indirect contact with a region including a magnetic element, said region including a magnetic element having a multi-layered structure comprising a plurality of ferromagnetic metal layers separated by a non-magnetic metal intermediate layer, and said potential barrier region being a potential barrier layer formed along an interface thereof with a semiconductor layer located outside said multi-layered structure in the stacking direction thereof, wherein
• the relative placement of magnetization of said ferromagnetic layers within said region containing a magnetic element is controlled by controlling at least one of the height and width of said potential barrier layer by applying an electric field to said potential barrier layer, and
• storage of information is effected by using at least one of magnetization of said region including a magnetic element.

A magnetization control method comprising:

• placing a potential barrier region in direct or indirect contact with a region including a magnetic element, said potential barrier region being a potential barrier layer comprising an insulating layer located outside said multi-layered structure in the stacking direction thereof, and said region including a magnetic element having a multi-layered structure composed of a plurality of ferromagnetic metal layers separated by a non-magnetic metal intermediate layer;
• and
• controlling relative placement of magnetization of said ferromagnetic metal layers within said region including a magnetic element by controlling qt least one of the height and width of the potential barrier of said potential barrier layer by applying an electric field to said potential barrier layer.

A magnetization control method comprising:

• placing a potential barrier region in direct or indirect contact with a region including a magnetic element, said region including a magnetic element being a single ferromagnetic layer, and said potential barrier region being a potential barrier layer formed along an interface thereof with a semiconductor layer located in contact with said ferromagnetic layer via a non-magnetic layer having a thickness of at least a one atom layer;
• and
• controlling the direction of magnetization of said ferromagnetic layer by controlling at least one of the height and width of the potential barrier of said potential barrier layer by applying an electric field to said potential barrier layer.

A magnetization control method comprising:

• placing a potential barrier region in direct or indirect contact with a region including a magnetic element, said region including a magnetic element being a single ferromagnetic layer, and said potential barrier region being a potential barrier layer comprising an insulating layer located in contact with said ferromagnetic layer via a non-magnetic layer having a thickness of at least a one atom layer;
• and
• controlling the direction of magnetization of said ferromagnetic layer by controlling at least one of the height and width of the potential barrier of said potential barrier layer by applying an electric field to said potential barrier layer.

A magnetic functional device comprising:

• a structure including a potential barrier region placed in direct or indirect contact with a region including a magnetic element, said region including a magnetic element having a multi-layered structure comprising a plurality of ferromagnetic metal layers separated by a non-magnetic metal intermediate layer, and said potential barrier region being a potential barrier layer comprising an insulating layer located outside said multi-layered structure in the stacking direction thereof, wherein
• the relative placement of magnetization of said ferromagnetic metal layers within said region including a magnetic element is controlled by controlling at least one of the height and width of the potential barrier of said potential barrier layer by applying an electric field to said potential barrier layer.

A magnetic functional device comprising:

• a structure including a potential barrier region placed in direct or indirect contact with a region including a magnetic element, said region including a magnetic element being a single ferromagnetic layer, and said potential barrier region being a potential barrier layer formed along an interface thereof with a semiconductor layer located in contact with said ferromagnetic layer via a non-magnetic layer having a thickness of at least one atom layer, wherein
• the direction of magnetization of said ferromagnetic layer is controlled by controlling at least one of the height and width of the potential barrier of said potential barrier layer by application of an electric field to said potential barrier layer.

A magnetic functional device comprising:

• a structure including a potential barrier region placed in direct or indirect contact with a region including a magnetic element, said region including a magnetic element being a single ferromagnetic layer, and said potential barrier region being a potential barrier layer comprising an insulating layer located in contact with said ferromagnetic layer via a non-magnetic layer having a thickness of at least one atom layer, wherein
• the direction of magnetization of said ferromagnetic layer is controlled by controlling at least one of the height and width of the potential barrier of said potential barrier layer by applying an electric field to said potential barrier layer.

An information storage device comprising:

• a structure including a potential barrier region placed in direct or indirect contact with a region including a magnetic element, said region including a magnetic element having a multi-layered structure comprising a plurality of ferromagnetic metal layers separated by a non-magnetic metal intermediate layer, and said potential barrier region being a potential barrier layer comprising an insulating layer located outside said multi-layered structure in the stacking direction thereof, wherein
• the relative placement of magnetization of said ferromagnetic metal layers within said region including a magnetic element is controlled by controlling at least one of the height and width of the potential barrier of said potential barrier layer by applying an electric field to said potential barrier layer, and
• storage of information is effected by using at least one of magnetization of said region including a magnetic element.

An information storage device comprising:

• a structure including a potential barrier region placed in direct or indirect contact with a region including a magnetic element, said region including a magnetic element being a single ferromagnetic layer, and said potential barrier region being a potential barrier layer formed along an interface thereof with a semiconductor layer located in contact with said ferromagnetic layer via a non-magnetic layer having a thickness of at least one atom layer, wherein
• the direction of magnetization of said ferromagnetic layer is controlled by controlling at least one of the height and width of the potential barrier of said potential barrier layer by applying an electric field to said potential barrier layer, and
• storage of information is effected by using at least one of magnetization of said region including a magnetic element.

An information storage device comprising:

• a structure including a potential barrier region placed in direct or indirect contact with a region including a magnetic element, said region including a magnetic element being a single ferromagnetic layer, and said potential barrier region being a potential barrier layer comprising an insulating layer located in contact with said ferromagnetic layer via a non-magnetic layer having a thickness of at least one atom layer, wherein
• the direction of magnetization of said ferromagnetic layer is controlled by controlling at least one of the height and width of the potential barrier of said potential barrier layer by applying an electric field to said potential barrier layer, and
• storage of information is effected by using at least one of magnetization of said region including a magnetic element.