Magnetoresistance effect type memory, and method and device for reproducing information from the memory

Abstract

A magnetoresistance effect type memory in and from which information is recorded and reproduced by utilizing a magnetoresistance effect comprises a substrate, a magnetoresistance film provided on the substrate, which comprises a reproducing layer, a memory layer and a non-magnetic layer provided between the reproducing layer and the memory layer, and a magnetization-fixing layer provided on the substrate, which orients a magnetization of the reproducing layer to one direction. In the magnetoresistance effect type memory a conductor wire may be disposed on the magnetoresistance film on a side opposite to the substrate. A recording-reproducing method for the magnetoresistance effect type memory comprises the steps of applying any one of positive and negative electric current pulses to the conductor wire, and detecting a change in resistance of the magnetoresistance film to reproduce information recorded in the memory layer. A recording-reproducing device for recoding and reproducing information in and from the magnetoresistance effect type memory comprises a means for supplying a uni-directional electric current to said conductor wire, and a means for detecting a change in resistance of said magnetoresistance film to reproduce information recorded in the memory.

Dependencies are inferred from the claim text.