Image display invention

An image display device comprising an image display section including an insulating substrate having a matrix of pixels formed on an inner surface thereof and a liquid crystal layer sandwiched between said insulating substrate and a substrate opposing said insulating substrate comprising:

• a plurality of signal lines;
• a plurality of driver circuits for driving said matrix of pixels via said plurality of signal lines;
• a plurality of voltage amplifiers formed by polycrystalline semiconductor TFTs and each coupled between one of said plurality of signal lines and a corresponding one of said plurality of driver circuits;
• said plurality of signal lines, said plurality of driver circuits and said plurality of voltage amplifiers being formed on a surface of said insulating substrate on a side thereof facing said liquid crystal layer,
• wherein said polycrystalline semiconductor TFTs are configured such that drain conductance of said polycrystalline semiconductor TFTs increases if electrical connections to said source and said drain are reversed from those in normal operation of said polycrystalline semiconductor TFTs.

An image display device comprising an image display section including an insulating substrate having a matrix of pixels formed on an inner surface thereof and a liquid crystal layer sandwiched between said insulating substrate and a substrate opposing said insulating substrate comprising:

• a plurality of signal lines;
• a plurality of driver circuits for driving said matrix of pixels via said plurality of signal lines;
• a plurality of voltage amplifiers formed by polycrystalline semiconductor TFTs and each coupled between one of said plurality of signal lines and a corresponding one of said plurality of driver circuits;
• said plurality of signal lines, said plurality of driver circuits and said plurality of voltage amplifiers being formed on a surface of said insulating substrate on a side thereof facing said liquid crystal layer,
• wherein said polycrystalline semiconductor TFTs are configured such that a drain voltage at which punch-through of electric charge from said source to said drain occurs decreases if electrical connections to said source and said drain are reversed from those in normal operation of said polycrystalline semiconductor TFTs.