Composite film resistors and method of making the same

Abstract

Disclosed is an electrical film resistor or a film thermistor formed by a composite of electrically-conducting oxide and electrically insulating aluminum oxide (Al2O3, the sapphire). In a preferred embodiment, the electrically-conducting oxide can be ruthenium oxide (RuO2) or iridium oxide (IrO2). The composite film is formed by a film deposition process such as rf sputtering deposition in the presence of an inert gas. By adjusting the composition ratio of the composite, or changing the reaction conditions of the film deposition, for example, the inert gas pressure or the substrate temperature, the composite film can be formed for applications in either electrical resistor devices or thermistors.

Dependencies are inferred from the claim text.