Semiconductor circuit configuration

A semiconductor circuit configuration, comprising:

• a semiconductor substrate of a first conductivity type;
• a first line and a second line;
• a first individual line and a second individual line;
• a substrate level connected to said semiconductor substrate;
• a driver circuit integrated in said semiconductor substrate and containing a first and a second positive voltage (PV) switching transistor for switching positive and zero-value voltage levels, and a first and a second negative voltage (NV) switching transistor for switching negative and the zero-value voltage levels, said first PV switching transistor connected between said first line and said first individual line, said first NV switching transistor connected between said substrate level and said first individual line, said second NV switching transistor connected between said second line and said second individual line, said second PV switching transistor connected between said substrate level and said second individual line, said driver circuit having a number of circuit stages including a first stage having a first inversion and level-changing circuit, and a second stage having a second inversion and level-changing circuit following said first inversion and level-changing circuit, said driver circuit having outputs formed by at least one activation line pair formed of two complementary lines being said first individual line and said second individual line;
• said first PV switching transistor and said first NV switching transistor able to connect a first activation voltage present on said first line to said first individual line, said second PV switching transistor and said second NV switching transistor at a same time able to connect a second activation voltage present on said second line to said second individual line, the first activation voltage and the second activation voltage can be of opposite polarity;
• said first PV switching transistor and said first NV switching transistor able to connect said first individual line to said substrate level, said second PV switching transistor and said second NV switching transistor at a same time able to connect said second individual line to said substrate level;
• an outer well disposed in said semiconductor substrate and formed of a second conductivity type being opposite to paid first conductivity type, said first NV switching transistor and said second NV switching transistor of said driver circuit formed within said outer well, said outer well connected to a supply voltage;
• an actuation circuit disposed upstream of and connected to said driver circuit and formed in said semiconductor substrate;
• and
• said first NV switching transistor and said second PV switching transistor each having a control terminal connected to said second inversion and level-changing circuit and each having electrode connections connected to said substrate level and to said two complementary individual lines.