US 6,480,034 B1Granted

MOS-type semiconductor integrated circuit

AssigneeKabushiki Kaisha Toshiba

InventorsKatsuki Matsudera, Masaru Koyanagi

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Abstract

An MOS-type semiconductor integrated circuit has two MOS transistors of the opposite conductivity channel types connected in series between a high-voltage potential terminal and a ground potential terminal. Those two MOS transistors constitute an inverter and their gates are connected together to an input node. As output nodes, first and second nodes are provided with a current path in between which includes transistors whose gates are connected to the high-voltage potential terminal. A current path including the first transistor which constitutes a switch is inserted between the first node and the output node, and a current path including the second transistor and a barrier transistor is inserted between the second node and the output node. The gates of the first and second transistors are respectively connected with complementary clock signals. The bate of the barrier transistor is connected to the high-voltage potential terminal.

Claims4

Dependent claims

A MOS-type semiconductor integrated circuit comprising:

a logic circuit operable on a voltage between a predetermined high-potential supply voltage and a low-potential supply voltage, and a switch circuit including a first MOS transistor of a first conductivity type and a second MOS transistor of a second conductivity type for controlling transfer of an output of said logic circuit with complementary signals,
wherein said logic circuit includes a first node to be connected to a first current path including said first MOS transistor, a second node to be connected to a second current path including said second MOS transistor, and a third current path comprising at least a first normally-on barrier MOS transistor inserted between said first and second nodes;
and
wherein at least one of said first and second current paths of said switch circuit includes at least a second normally-on barrier MOS transistor of the same conductivity as that of at least one of said first and second MOS transistors included in said first current path or second current path, respectively.

1 more element

Dependencies are inferred from the claim text.