Beta cell device using icosahedral boride compounds
OwnerTerrence L. Aselage, David Emininventors
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Abstract
A beta cell for converting beta-particle energies into electrical energy having a semiconductor junction that incorporates an icosahedral boride compound selected from B12As2, B12P2, elemental boron having an α-rhombohedral structure, elemental boron having a β-rhombohedral structure, and boron carbides of the chemical formula B12-xC3-x, where 0.15<x<1.7, a beta radiation source, and means for transmitting electrical energy to an outside load. The icosahedral boride compound self-heals, resisting degradation from radiation damage.
Claims18
A beta cell for converting beta-particle energies into electrical energy, comprising:
- a semiconductor junction incorporating an icosahedral boride compound, wherein the icosahedral boride compound is selected from the group consisting of B12As2, B12P2, elemental boron having an α-rhombohedral structure, elemental boron having a β-rhombohedral structure, and boron carbides of the chemical formula B12-xC3-x, where 0.15<x<1.7;
- a beta radiation source;
- and
- means for transmitting electrical energy to an outside load.
A beta cell for converting beta-particle energies into electrical energy, comprising:
- a semiconductor junction incorporating an icosahedral boride compound, wherein the semiconductor junction is deposited on a substrate selected from the group of substrates consisting of SiC and metal diboride compounds;
- a beta radiation source;
- means for transmitting electrical energy to an outside load;
- and
- an electrical contact of a metal diboride compound layered between the substrate and the icosahedral boride compound.
A beta cell device for converting beta-particle energies into electrical energy, comprising:
- a stack of beta cells comprising beta radiation-emitting strata and semiconductor junction strata, said semiconductor junction strata incorporating an icosahedral boride compound, wherein the icosahedral boride compound is selected from the group consisting of B12As2, B12P2, elemental boron having an α-rhombohedral structure, elemental boron having a β-rhombohedral structure, and boron carbides of the chemical formula B12-xC3-x, where 0.15<x<1.7;
- a means of forming electrical connections between individual beta cells in the stack;
- a shield encapsulating said beta radiation-emitting strata, said semiconductor junction strata, and said electrical connections;
- a positive conductor terminal and a negative conductor terminal being accessible externally of said shield;
- and
- said positive conductor terminal and said negative conductor terminal operatively connected to means for transmitting electrical energy to an outside load.
Dependencies are inferred from the claim text.