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US 6,479,902 B1Granted
Semiconductor catalytic layer and atomic layer deposition thereof
AssigneeAdvanced Micro Devices, Inc.
InventorsSergey D. Lopatin, Carl J. Galewski
Life of this patent
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Abstract
A semiconductor and manufacturing method is provided for device interconnects with a catalytic layer of copper, palladium, nickel, cobalt, silver, or other catalytic material deposited in a atomic layer by atomic layer epitaxy on a barrier layer of tantalum, titanium, tungsten, their nitrides, or a compound thereof between the barrier layer and an electroless seed layer on which conductive channel and via material is deposited.
Claims12
A semiconductor comprising:
- a semiconductor substrate;
- a dielectric layer formed on a region of the semiconductor substrate;
- an opening in the dielectric layer, the opening defined by walls of the dielectric layer and exposing a conductive area in the semiconductor;
- a barrier layer over the dielectric layer in the opening, including along the walls, and in conductive contact with the conductive area;
- a catalytic layer having an atomic thickness, the catalytic layer over and bonded to the barrier layer
- a seed layer of conductive material over and bonded to the catalytic layer;
- and
- a conductive layer in over the seed layer and bonded to the seed layer;
- the conductive layer substantially filling the opening.
6 more elements
A semiconductor comprising:
- a semiconductor substrate;
- a dielectric layer formed on a region of the semiconductor substrate;
- an opening in the dielectric layer, the opening defined by walls of the dielectric layer and exposing a conductive area in the semiconductor;
- a barrier layer in direct contact with and bonded to the dielectric layer in the opening, including along the walls, and in conductive contact with the conductive area;
- a catalytic layer having an atomic thickness deposited by atomic layer epitaxy, the catalytic layer over and bonded to the barrier layer
- a seed layer of conductive material over and bonded to the catalytic layer;
- and
- a conductive layer in direct contact with and bonded to the seed layer, the conductive layer substantially filling the opening.
5 more elements
Dependencies are inferred from the claim text.