Back to results
US 6,479,898 B1Granted
Dielectric treatment in integrated circuit interconnects
AssigneeAdvanced Micro Devices, Inc.
InventorsDawn M. Hopper, Minh Van Ngo, Joffre F. Bernard
Life of this patent
Estimating the term…
Abstract
An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A device dielectric layer formed on the semiconductor substrate. A channel dielectric layer on the device dielectric layer has an opening formed therein and a surface region of nitrogen. A barrier layer lines the channel opening and reacts with the nitrogen to form an improved metal nitride surfaced barrier layer. A conductor core fills the opening over the barrier layer.
Claims10
An integrated circuit comprising:
- a semiconductor substrate having a semiconductor device provided thereon;
- a dielectric layer formed on the semiconductor substrate having an opening provided therein and a dielectric surface region having nitrogen therein;
- a barrier layer lining the opening and having the surface thereof proximate the dielectric surface region forming a nitride with the nitrogen in the dielectric surface region;
- and
- a conductor core filling the opening and connected to the semiconductor device.
2 more elements
An integrated circuit comprising:
- a silicon substrate having a semiconductor device provided thereon;
- a device oxide layer formed on the silicon substrate;
- a channel oxide layer of tetraethoxysilane formed on the device oxide layer having a channel opening provided therein and a channel oxide surface region having nitrogen therein;
- a barrier layer lining the channel opening and having the surface thereof proximate the dielectric surface region of a metal and forming a nitride with the nitrogen in the dielectric surface region;
- and
- a conductor core filling the channel opening and connected to the semiconductor device, the conductor core over the barrier layer.
3 more elements
Dependencies are inferred from the claim text.