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US 6,479,897 B2Granted
Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same
AssigneeTokyo Electron Limited
InventorsTakashi Akahori, Akira Suzuki
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Abstract
A semiconductor device has a dielectric film made of a fluorine-added carbon film formed on a substrate, a metallic layer formed on the fluorine-added carbon film and an adhesive layer formed between the dielectric film and the metallic layer. The adhesive layer is made of a compound layer having carbon and the metal (or metal the same as the metal included in the metallic layer), to protect the metallic layer from being peeled-off from the fluorine-added carbon film.
Claims6
A semiconductor device comprising:
- a dielectric film made of a fluorine-added carbon film formed on a substrate;
- a metallic layer formed on the fluorine-added carbon film;
- and
- an adhesive layer made of a compound layer including carbon and metal the same as metal included in the metallic layer, the adhesive layer being formed between the fluorine-added carbon film and the metallic layer, to protect the metallic layer from being peeled-off from the fluorine-added carbon film.
1 more element
Dependencies are inferred from the claim text.