Current-limiting device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYoshihiro Yamaguchi, Takeaki Asaeda, Katsumi Satoh, Noritoshi Hirano
Life of this patent
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Abstract
The current-limiting device 1 includes a silicon substrate 2 having surfaces opposite to each other, and two electrodes 3 deposited respectively on the opposite surfaces of the silicon substrate. The silicon substrate 2 is of a three-layered structure including an N− layer 4 of a low impurity density and an N+ layers 5 of a high impurity density formed respectively on opposite surfaces of the N− layer 4. The electrodes 3, are deposited on an outer surface of each of the N+ layers 5 remote from the N− layer 4. The constant current substantially flows in the current-limiting device 1 if the applied voltage is higher than a predetermined value.
Claims13
A current-limiting device comprising:
- a silicon substrate comprising:
- an N-type layer;
- and
- two N+ layers respectively formed on opposite surfaces of said N-type layer;
- and
- two electrodes deposited on opposite surfaces of said silicon substrate, and in which a voltage is applied on said silicon substrate,
- wherein a constant current flows in said current-limiting device when the voltage applied is higher than a predetermined value.
A current-limiting device comprising:
- a silicon substrate comprising:
- an N type layer;
- two N+ layers that are respectively formed on opposite surfaces of said N type layer;
- two electrodes that are deposited on opposite surfaces of said silicon substrate, and in which a voltage is applied on said silicon substrate;
- and
- a plurality of P layers that are partially formed in each of said N+layers,
- wherein a constant current flows in said current-limiting device if the voltage applied is higher than a predetermined value.
A current-limiting device comprising:
- a silicon substrate comprising:
- an N type layer;
- two N+ layers that are respectively formed on opposite surfaces of said N type layer;
- two electrodes that are deposited on opposite surfaces of said silicon substrate, and in which a voltage is applied on said silicon substrate;
- and
- two P layers that are formed on the opposite surfaces of said N+ layers,
- wherein a constant current flows in said current-limiting device if the voltage applied is higher than a predetermined value.
Dependencies are inferred from the claim text.