Silicon-on-insulator transistors with asymmetric source/drain junctions formed by angled germanium implantation

A silicon-on-insulator (SOI) transistor, comprising a source and drain having a body disposed therebetween, and a gate disposed on the body, the source and drain implanted with atoms selected from silicon, argon, krypton and xenon, the atoms being implanted at an angle titled towards the source and after source and drain dopant implantation such that the source has a concentration of atoms at a source/body junction and the gate shields atom implantation in the drain adjacent a drain/body junction resulting in a graduated drain/body junction where a portion of the drain distal the body is more heavily doped with germanium than a portion of the drain adjacent the body, the source/body junction forming a tunneling junction and the graduated drain/body junction effective to reduce junction capacitance.