SOI device with self-aligned selective damage implant, and method
AssigneeAdvanced Micro Devices, Inc.
InventorQi Xiang
Life of this patent
Estimating the term…
Abstract
A transistor on an SOI wafer has a subsurface recombination area at least partially within its body. The recombination area includes one or more damaged recombination regions. The damaged recombination region(s) may be formed by a damaging implant into a surface semiconductor layer, for example through an open portion of a doping mask, the opening portion created for example by removal of a dummy gate. Alignment of the damaged recombination region(s) is improved by forming the source and drain of the transistor prior to removal of the dummy gate, using the dummy gate as a doping mask.
Claims8
A semiconductor-on-insulator (SOI) transistor device comprising:
- an insulating layer made of an insulating material;
- an active layer of semiconductor material atop the insulating layer, the active layer including a body between a source and a drain, wherein the source and the drain are of a same conductivity type, and wherein the body is of an opposite conductivity type;
- and
- a gate atop the body;
- wherein the body includes a damaged area therein,
- wherein the damaged area is not in contact with the source or the drain;
- wherein the damaged area is a subsurface area below a top surface of the active layer;
- and
- wherein the damaged area is closer to a source-body boundary than to a drain-body boundary.
A semiconductor-on-insulator transistor device comprising:
- an insulating layer made of an insulating material;
- an active layer of semiconductor material atop the insulating layer, the active layer including a body between a source and a drain, wherein the source and the drain are of a same conductivity type, and wherein the body is of an opposite conductivity type;
- a gate atop the body;
- and
- implanted material within the device;
- wherein the body includes a damaged area therein;
- wherein the damaged area includes therein at least some of the implanted material;
- wherein the damaged area is not in contact with the source or the drain;
- wherein the implanted material is not within the source or the drain;
- and
- wherein the implanted material is not underneath the source or the drain.
Dependencies are inferred from the claim text.