Method and apparatus for a semiconductor device with adjustable threshold voltage
AssigneeAdvanced Micro Devices, Inc.
InventorZoran Krivokapic
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Abstract
The present invention provides a semiconductor device with a channel length of approximately 0.05 microns. A semiconductor device according to the present invention, and a method for producing such a semiconductor device, comprises a control gate, a first floating gate located in proximity to the control gate, and a second floating gate located in proximity to the control gate. The present invention allows the threshold voltage of the device to be adjusted to various levels. Additionally, the device according to the present invention can be used as a very effective nonvolatile memory device.
Claims9
A semiconductor device comprising:
- a cell including
- a first gate;
- a second gate located in proximity to the first gate;
- a third gate located in proximity to the first gate;
- a plurality of electrodes coupled to the cell, the plurality of electrodes including a first electrode and a second electrode, the first electrode being located in proximity to the second gate and the second electrode being located in proximity to the third gate, the plurality of electrodes allowing a variable threshold voltage to be provided in the cell;
- a plurality of insulating layers;
- and
- a plurality of insulating spacers;
- wherein the second gate has a first side and the third gate has a second side, a first spacer of the plurality of insulating spacers and a first layer of the plurality of insulating layers being disposed between the first side of the second gate and the first gate, a second spacer of the plurality of spacers and a second layer of the plurality of insulating layers being disposed between the second side of the third gate and the first gate.
Dependencies are inferred from the claim text.