Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
AssigneeMicron Technology, Inc.
InventorsRandhir P. S. Thakur, Garry A. Mercaldi, Michael Nuttall
Life of this patent
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Abstract
A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.
Claims23
A dynamic-random-access-memory cell, comprising:
- a switch having a control terminal, an access terminal, and a storage terminal;
- and
- a storage element having a data terminal coupled to the storage terminal of the switch and having a reference terminal, the storage element comprising,
- a single layer silicon nitride dielectric having first and second opposite sides,
- an electrode adjacent to the first side of the dielectric and coupled to the data terminal,
- a conductive barrier layer that is adjacent to the second side of the dielectric, and
- a layer of semiconductor material adjacent to the conductive barrier layer, the layer of semiconductor material coupled to the reference terminal.
A dynamic-random-access-memory cell, comprising:
- a switch having a control terminal, an access terminal, and a storage terminal;
- and
- a storage element having a data terminal coupled to the storage terminal of the switch and having a reference terminal, the storage element comprising,
- a dielectric having first and second opposite sides and formed from a single layer of silicon nitride,
- a conductive barrier layer adjacent to the first side of the dielectric
- a layer of semiconductor material adjacent the conductive barrier layer, the layer of semiconductor material coupled to the data terminal, and
- an electrode formed from a semiconductor material adjacent to the second side of the dielectric and coupled to the reference terminal.
A dynamic-random-access-memory cell, comprising:
- a switch having a control terminal, an access terminal, and a storage terminal;
- and
- a storage element having a data terminal coupled to the storage terminal of the switch and having a reference terminal, the storage element comprising,
- a single layer of silicon nitride having first and second opposite sides,
- a conductive barrier layer adjacent to the first side of the silicon nitride layer,
- a layer of semiconductor material formed adjacent the conductive barrier layer and coupled to the data terminal, and
- a silicon germanium electrode adjacent to the second side of the silicon nitride layer and coupled to the reference terminal.
Dependencies are inferred from the claim text.