Magnetic random access memory with write and read circuits using magnetic tunnel junction (MTJ) devices

A magnetic random access memory with read and write circuits using a plurality of magnetic tunnel junction devices, the magnetic random access memory comprising:

• a plurality of word lines, arranged in a striped pattern at a regular interval;
• a plurality of read bit lines and a plurality of write bit lines, arranged in a striped pattern in a direction intersecting at least one of the plurality of word lines, and parallel to each other;
• the plurality of magnetic tunnel junction devices, each having at least one side and a bottom, formed in contact with at least one of the plurality of word lines and read bit lines at a cross point of the two lines;
• and
• a plurality of current bypass paths, each coupled to one of the plurality of word lines and one of the plurality of write bit lines, and formed to allow current to bypass a side and a bottom of one of the plurality of magnetic tunnel junction devices.