Diode

Abstract

Disclosed is an inventive diode which can reduce a stray capacity to improve various characteristics thereof, in which a dielectric layer, a conductive layer and a second dielectric layer are respectively formed by deposition in this order on an upper face of a semiconductor substrate excluding a central portion of an exposed surface of a P-type region. Then, an anode side electrode is formed extending from the exposed surface of the P-type region to the upper face of the second dielectric layer, and is electrically connected with the P-type region. Herein, the conductive layer is formed such that it is isolated from the electrode by the second dielectric layer, is connected with the semiconductor substrate upper face in a location where the dielectric layer has not been formed, and partially resides in a location sandwiched between the electrode and the semiconductor substrate. Such configuration could prevent a depletion layer from being generated in the vicinity of a surface of a higher resistivity region lying under the conductive region. Further, according to such configuration, a stray capacity between the electrode and the semiconductor substrate could be made lower than the capacity value generated between the electrode and the conductive layer.

Dependencies are inferred from the claim text.