US 6,479,839 B2Granted

III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer

AssigneeTechnologies and Devices International, Inc.

InventorsAudrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev

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Abstract

A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1−x−y−zN, InGaN1−a−bPaAsb, or AlxByInzGa1−x−y−zN1−a−bPaAsb.

Claims51

Dependent claims

A compound semiconductor device, comprising:

a substrate;
a first high temperature n-type III-V compound layer having a first band gap grown directly on said substrate, wherein said high temperature n-type III-V compound layer is grown at a temperature greater than 900° C. using HVPE techniques, wherein a low temperature buffer layer is not interposed between said substrate and said high temperature n-type III-V compound layer;
a second n-type III-V compound layer having a second band gap grown on said first high temperature n-type III-V compound layer using HVPE techniques, wherein said first band gap is wider than said second band gap;
a first p-type III-V compound layer having a third band gap grown on said second n-type III-V compound layer using HVPE techniques;
a second p-type III-V compound layer having a fourth band gap grown on said first p-type III-V compound layer using HVPE techniques, wherein said fourth band gap is wider than said third band gap;
and
a non-continuous quantum dot layer comprised of a plurality of AlxByInzGa1−x−y−zN quantum dot regions, said non-continuous quantum dot layer formed between said second n-type III-V compound layer and said first p-type III-V compound layer, wherein 0.01≦x+y≦0.2.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/861,180Filed 18 May 2001 · continuation in part
Priority: 18 Nov 1997
Published: US 2002/0030192 A114 Mar 2002
Granted: 12 Nov 2002
Term ends: Not estimatedThe source records don’t support an estimate.

Classification26 codes

C30B 25/02
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth: epitaxial-layer growth
B82Y 10/00
Nanotechnology for information processing, storage or transmission
B82Y 30/00
Nanotechnology for materials or surface science
C30B 29/40
Inorganic compounds or compositions: aIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Family

Application60/066,940Us provisional application · filed 18 Nov 1997
Application09/195,217Parent of this division · filed 18 Nov 1998
Application09/638,638Parent of this continuation-in-part · filed 14 Aug 2000
US 2002/0030192 A1Pre-grant publication · published 14 Mar 2002
Application09/638,638Parent of this division
US 6,218,269 B1Parent of this division
US 6,479,839 B2This patent

From the US filing history. Foreign family members aren’t listed.