US 6,479,384 B2 · Process for fabricating a semiconductor device

Abstract

A process for fabricating a semiconductor device, which comprises forming, on a metal wiring formed from copper or a copper alloy, a barrier film which functions as a diffusion-preventing film for the metal wiring by an electroless plating method, wherein a catalytic metal film which serves as a catalyst in the electroless plating method is selectively formed on the metal wiring by a displacement plating method using a displacement plating solution at a temperature in the range of 30° C. or more and lower than a boiling point thereof, and the barrier film is selectively formed on the catalytic metal film by the electroless plating method. It is an object of the present invention, to selectively and uniformly carry out the catalyst activation to the surface of the metal wiring made of copper or a copper alloy by using palladium so as to improve plating property of the electroless plating method using a hypophosphite as a reducing agent and the reliability of the wiring.

Claims18

Dependent claims

A process for fabricating a semiconductor device, which comprises forming, on a metal wiring formed from copper or a copper alloy, a cobalt tungsten phosphorus barrier film which functions as a diffusion-preventing film for said metal wiring by an electroless plating method, said process comprising the steps of:

selectively forming, on said metal wiring, a catalytic metal film which serves as a catalyst in said electroless plating method by a displacement plating method using a displacement plating solution at a temperature in a range of 30° C. or more and lower than a boiling point thereof;
and
selectively forming said cobalt tungsten phosphorus barrier film on said catalytic metal film by the electroless plating method.

Dependencies are inferred from the claim text.

Process for fabricating a semiconductor device

Life of this patent

Process for fabricating a semiconductor device

Life of this patent

Abstract

Claims18