CVD ruthenium seed for CVD ruthenium deposition

A method of forming a ruthenium seed layer on a substrate comprising the steps of:

• (a) vaporizing a ruthenium-containing compound at a temperature of about 200° C. to about 400° C.;
• (b) introducing the vaporized ruthenium-containing compound into a CVD apparatus;
• (c) introducing oxygen into the CVD apparatus to form an oxygen rich environment;
• wherein said oxygen is introduced at a flow rate of about 1000 sccm to about 5000 sccm;
• (d) maintaining the oxygen rich environment in a process chamber of the CVD apparatus wherein the oxygen to ruthenium ratio in said environment is from about 1:1 to about 100:1;
• (e) depositing a ruthenium oxide layer onto the substrate by chemical vapor deposition;
• and
• (f) annealing the deposited ruthenium oxide layer in a gas ambient selected from the group consisting of H2/N2, H2 and H2/Ar;
• said annealing occurring at a temperature from about 200° C. to about 600° C.;
• wherein said annealing removes oxygen from said ruthenium oxide layer thereby forming the ruthenium seed layer.

A method of forming a ruthenium seed layer on a substrate comprising the steps of:

• (a) vaporizing a ruthenium-containing compound at a temperature of about 200° C. to about 400° C.;
• (b) introducing the vaporized ruthenium-containing compound into a CVD apparatus;
• (c) introducing oxygen into the CVD apparatus to form an oxygen- rich environment;
• wherein said oxygen is introduced at a flow rate of about 1000 sccm to about 5000 sccm;
• (d) maintaining the oxygen rich environment in a process chamber of the CVD apparatus wherein the oxygen to ruthenium ratio in said environment is from about 1:1 to about 100:1;
• (e) depositing a ruthenium oxide layer onto the substrate by chemical vapor deposition such that the ruthenium oxide is RuOx wherein x is about 2;
• and
• (f) annealing the deposited ruthenium oxide layer in a gas ambient selected from the group consisting of H2/N2, H2 and H2/Ar;
• said annealing occurring at a temperature from about 200° C. to about 600° C.;
• wherein said annealing removes oxygen from said ruthenium oxide layer such that the ruthenium is RuOy with y less than 2 thereby forming the ruthenium seed layer.

A method of forming a ruthenium seed layer on a substrate comprising the steps of:

• (a) vaporizing a ruthenium-containing compound;
• (b) introducing the vaporized ruthenium-containing compound into a CVD apparatus;
• (c) introducing oxygen into the CVD apparatus to form an oxygen rich environment;
• wherein said oxygen is introduced at a flow rate such that an oxygen to ruthenium ratio in the oxygen rich environment is from about 1:1 to about 100:1;
• (d) maintaining the oxygen rich environment in a process chamber of the CVD apparatus;
• (e) depositing a ruthenium oxide layer onto the substrate by chemical vapor deposition;
• and
• (f) annealing the deposited ruthenium oxide layer in a gas ambient to remove oxygen from said ruthenium oxide layer thus forming the ruthenium seed layer.