Memory repair circuit using antifuse of MOS structure
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsPhil-Jung Kim, Jae-Kyung Wee, Chang-Hyuk Lee, Young-Ho Seol, Jin-Keun Oh, Ho-Youb Cho
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Abstract
A memory repair circuit uses an antifuse of MOS structure, capable of repairing defective cells by constructing the antifuse by MOS transistors and programming the antifuse circuit properly. The memory repair circuit comprises a plurality of antifuse devices, each programmed when a power voltage and a negative voltage are supplied respectively to a first electrode and a second electrode thereof; a latch for detecting and latching program states of the antifuse devices; and a redundancy block for replacing a defect cell with a redundancy cell depending on the output of the latch.
Claims32
A memory repair circuit comprising:
- a plurality of antifuse devices, each programmed when a power voltage and a negative voltage are supplied to first and second electrodes of the antifuse device, respectively;
- a latching means for detecting and latching a program state of the antifuse device;
- and
- a redundancy block for replacing a defective cell with a redundant cell based on an output of the latching means.
A memory repair circuit comprising:
- a power-up reset circuit for outputting a power voltage when power transits from 0 V to a predetermined voltage;
- an address multiplexer for outputting a signal for selecting an antifuse device to program;
- a voltage generator for supplying a program voltage;
- an antifuse circuit for programming the antifuse device based on an output of the power-up reset circuit, the address multiplexer and the voltage generator, and sensing whether the antifuse device is programmed;
- and
- a redundancy block for replacing a detective cell with a redundancy cell based on an output of the antifuse circuit.
The memory repair circuit comprising:
- a plurality of antifuse devices, each antifuse device programmed when a high voltage is supplied to a first electrode of the antifuse device and a voltage lower than a power voltage is supplied to a second electrode of the antifuse device;
- a latching means for detecting and latching a program state of each antifuse device;
- and
- a redundancy block for replacing a defective cell with a redundancy cell depending on an output of the latching means.
Dependencies are inferred from the claim text.