Method for operating non-volatile memory with symmetrical dual-channels
AssigneeMacronix International Co., Ltd.
InventorTung-Cheng Kuo
Life of this patent
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Abstract
A method for operating a non-volatile memory with symmetrical dual-channels. A programmed step is performed on the non-volatile memory to retain charges in both sides of an ONO layer so that the symmetrical dual-channels are generated and the one-bit writing step is completed. Afterwards, a selected voltage is simultaneously exerted on a first bit line and a third bit line to select a second bit line of the symmetrical dual-channels. Finally, a reading voltage is applied to the second bit line to acquire a reading current which is the sum of total current through the symmetrical dual-channels for increasing the reading speed of the non-volatile memory.
Claims8
A writing method of operating a non-volatile memory with symmetrical dual-channels, said non-volatile memory comprising a plurality of bit lines and a plurality of word lines extending transversely of said bit lines, said method comprising the steps of:
- applying a writing voltage to a second bit line to electrically program a unit cell having symmetrical dual-channels, wherein the symmetrical dual-channels retain a plurality of charges on both sides of said second bit line;
- grounding a first bit line and a third bit line which are adjacent to and positioned on
- said two sides of said second bit line, respectively;
- applying a positive voltage to a second word line;
- and grounding a first word line and a third word line which are adjacent to and positioned on opposite sides of said second word line, respectively.
Dependencies are inferred from the claim text.