Voltage generator for semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTetsuya Kaneko, Junichi Okamura
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Abstract
A voltage generator for outputting an output voltage at an output terminal thereof includes a driver MOS transistor of a first conductivity type having a first end connected to said output terminal and a capacitor connected between the output terminal and a second voltage node. The capacitor comprises a plurality of trench capacitors formed in a semiconductor substrate.
Claims13
A voltage generator for outputting an output voltage at an output terminal thereof, comprising:
- a driver MOS transistor of a first conductivity type having a fast end connected to said output terminal:
- a first MOS transistor of second conductivity type connected between a first voltage node and a second end of said driver MOS transistor;
- a capacitor connected between said output terminal and a second voltage node, wherein said capacitor comprises a plurality of trench capacitors formed in a semiconductor substrate;
- and
- a first voltage generator connected to said output terminal, for generating a first voltage supplying to said output terminal.
A voltage generator for outputting a voltage at an output terminal thereof, comprising:
- a driver MOS transistor of a first conductivity type having a first end connected to said output terminal;
- a first MOS transistor of second conductivity type connected between a first voltage node and a second end of said driver MOS transistor,
- a capacitor connected between said output terminal and a second voltage node, said capacitor comprising a trench capacitor formed in a semiconductor substrate;
- and
- a first voltage generator connected to said output terminal, for generating a first voltage supplying to said output terminal.
The voltage generator according to clam 1, where said first voltage generator has a P channel MOS transistor, a first end of the P channel MOS transistor is connected to said output terminal.
Dependencies are inferred from the claim text.