Image display device and method of making the same

An image display device comprising:

• a plurality of pixels arranged in a matrix, said
• plurality of pixels each being provided with a pixel switching means, a pixel electrode coupled with said pixel switching means for applying an electric field to a material producing an electro-optical effect;
• a common electrode for cooperating with said pixel electrode in driving said material producing an electro-optical effect;
• a plurality of gate lines each extending in parallel with each other and connected to a corresponding row of said pixel switching means for selecting said corresponding row of said pixel switching means in a predetermined order;
• a gate line driver circuit for driving said plurality of gate lines;
• a plurality of signal lines extending in such a manner as to intersect said plurality of gate lines for supplying display signal voltages to said pixel electrodes via selected ones of said pixel switching means;
• and
• a display signal voltage applying circuit for applying said display signal voltages to respective ones of said plurality of signal lines,
• wherein said pixel switching means each is comprised of a poly-Si TFT of a first type structure, said display signal voltage applying circuit contains a plurality of poly-Si TFTs of a second type structure,
• a gate of each of said poly-Si TFTs of the first type structure is disposed to oppose a first side of a first poly-Si thin film for forming a channel of said poly-Si TFT of the first type structure with a first gate insulating film interposed therebetween and is connected to a corresponding one of said plurality of gate lines,
• a gate of each of said plurality of poly-Si TFTs of the second type structure is disposed to oppose a first side of a second poly-Si thin film for forming a channel of each of said plurality of poly-Si TFTs of the second type structure with a second gate insulating film interposed therebetween,
• sources and drains of said poly-Si TFTs of the first and second type structures are disposed approximately in a same plane on a same substrate of said image display device,
• said first side of said first poly-Si thin film and said first side of said second poly-Si thin film are on opposite sides of said same plane from each other, and
• said second gate insulating film is thinner than said first gate insulating film.

An image display device comprising:

• a plurality of pixels arranged in a matrix, said plurality of pixels each being provided with a pixel switching means, a pixel electrode coupled with said pixel switching means for applying an electric field to a material producing an electro-optical effect;
• a common electrode for cooperating with said pixel electrode in driving said material producing an electro-optical effect;
• a plurality of gate lines each extending in parallel with each other and connected to a corresponding row of said pixel switching means for selecting said corresponding row of said pixel switching means in a predetermined order;
• a gate line driver circuit for driving said plurality of gate lines;
• a plurality of signal lines extending in such a manner as to intersect said plurality of gate lines for supplying display signal voltages to said pixel electrodes via selected ones of said pixel switching means;
• and
• a display signal voltage applying circuit for applying said display signal voltages to respective ones of said plurality of signal lines,
• wherein said pixel switching means each is comprised of a poly-Si TFT of a first type structure,
• said display signal voltage applying circuit contains a plurality of poly-Si TFTs of a second type structure,
• a first gate of each of said poly-Si TFTs of the first type structure is disposed to oppose a first poly-Si thin film for forming a channel of said poly-Si TFT of the first type structure with a first gate insulating film interposed therebetween on a surface of a substrate of said image display device and is connected to a corresponding one of said plurality of gate lines,
• a second gate of each of said plurality of poly-Si TFTs of the second type structure is disposed to oppose a second poly-Si thin film for forming a channel of each of said plurality of poly-Si TFTs of the second type structure with a second gate insulating film interposed therebetween on said surface,
• an order of arrangement of said first gate and said first poly-Si thin film is reversed from an order of arrangement of said second gate and second poly-Si thin film, and
• said second gate insulating film is thinner than said first gate insulating film.