Semiconductor device and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsSatoshi Yamada, Michitaka Kimura, Masatoshi Yasunaga
Life of this patent
Estimating the term…
Abstract
An insulating resin sheet made from a thermosetting resin is provided on an insulating substrate in such a manner as to cover bonding pads provided on the insulating substrate. A lower chip is set on the insulating substrate in such a manner that bonding bumps connected to inner connection terminals of the lower chip break the insulating resin sheet 24 to be in contact with the bonding pads. The insulating resin sheet is thermally cured and subsequently the bonding bumps are melted.
Claims20
A semiconductor device having a plurality of semiconductor chips including a first semiconductor chip bonded by a flip-chip bonding method, the device comprising:
- bonding bumps bonded to a metal portion of inner connection terminals formed on the front surface of said first semiconductor chip or metal films for covering said inner connection terminals;
- bonding pads bonded to said inner connection terminals of said first semiconductor chip via said bonding bumps;
- and
- a thermosetting resin film for surrounding said bonding bumps;
- wherein a non-wetted region in which said bonding bump is not wetted and a wetted region in which said bonding bump is wetted are formed on said metal portion of the inner connection terminal or said metal film,
- said non-wetted region is made from a metal material as is said wetted region;
- and
- a hardening temperature of said thermosetting resin is lower than a melting temperature of said bonding bumps.
A semiconductor device having a plurality of semiconductor chips including a first semiconductor chip bonded by a flip-chip bonding method, the device comprising:
- bonding bumps bonded to inner connection terminals formed on the front surface of said first semiconductor chip or metal films for covering said inner connection terminals;
- bonding pads bonded to said inner connection terminals of said first semiconductor chip via said bonding bumps;
- a thermosetting resin film for surrounding said bonding bumps;
- wherein a non-wetted region in which said bonding bump is not wetted and a wetted region in which said bonding bump is wetted are formed on said inner connection terminal or said metal film,
- said non-wetted region includes a region made from a material identical with that forming said wetted region, and
- a hardening temperature of said thermosetting resin is lower than a melting temperature of said bonding bumps;
- an insulating substrate including on its front surface external connection terminals and also including on its back surface bonding pads;
- a second semiconductor chip which is stacked on said first semiconductor chip bonded by the flip-chip bonding method and is connected to said bonding pads by the wire-bonding method;
- and
- a heat radiation plate stacked on said first semiconductor chip and said second semiconductor chip, wherein said heat radiation plate is disposed between said first semiconductor chip and said second semiconductor chip.
A semiconductor device having a plurality of semiconductor chips including a first semiconductor chip bonded by a flip-chip bonding method, the device comprising:
- bonding bumps bonded to inner connection terminals formed on the front surface of said first semiconductor chip or metal films for covering said inner connection terminals;
- bonding pads bonded to said inner connection terminals of said first semiconductor chip via said bonding bumps;
- a thermosetting resin film for surrounding said bonding bumps;
- wherein a non-wetted region in which said bonding bump is not wetted and a wetted region in which said bonding bump is wetted are formed on said inner connection terminal or said metal film,
- said non-wetted region includes a region made from a material identical with that forming said wetted region, and
- a hardening temperature of said thermosetting resin is lower than a melting temperature of said bonding bumps;
- an insulating substrate including on its front surface external connection terminals and also including on its back surface bonding pads, wherein said insulating substrate includes on its front surface bonding pads conducted to said external connection terminals and also includes openings through which said bonding pads are exposed to the back surface side of said insulating substrate;
- and
- a second semiconductor chip which is stacked on said first semiconductor chip bonded by the flip-chip bonding method and is connected to said bonding pads by the wire-bonding method, wherein part or all of inner connection wires for wire-bonding connected to said second semiconductor chip are bonded to said bonding pads provided on the front surface of said insulating substrate through said openings.
A semiconductor device having a plurality of semiconductor chips including a first semiconductor chip bonded by a flip-chip bonding method, the device comprising:
- bonding bumps bonded to inner connection terminals formed on the front surface of said first semiconductor chip or metal films for covering said inner connection terminals;
- bonding pads bonded to said inner connection terminals of said first semiconductor chip via said bonding bumps;
- a thermosetting resin film for surrounding said bonding bumps;
- wherein a non-wetted region in which said bonding bump is not wetted and a wetted region in which said bonding bump is wetted are formed on said inner connection terminal or said metal film,
- said non-wetted region includes a region made from a material identical with that forming said wetted region, and
- a hardening temperature of said thermosetting resin is lower than a melting temperature of said bonding bumps;
- an insulating substrate including on its front surface external connection terminals and also including on its back surface bonding pads;
- and
- a second semiconductor chip which is stacked on said first semiconductor chip bonded by the flip-chip bonding method and is connected to said bonding pads by the wire-bonding method, wherein the number of said first semiconductor chip is different from that of said second semiconductor chip stacked on said first semiconductor chip.
A method of manufacturing a semiconductor device including a first semiconductor chip bonded by the flip-chip bonding method, the method comprising the steps of:
- forming a thermosetting resin film in such a manner as to cover a plurality of bonding pads to be conducted to inner connection terminals of said first semiconductor chip;
- setting said first semiconductor chip in such a manner that bonding bumps bonded to said inner connection terminals of said first semiconductor chip or metal films for covering said inner connection terminals are in contact with said bonding pads after penetrating said thermosetting resin film;
- thermally curing said thermosetting resin film after completion of the setting of said first semiconductor chip;
- and
- melting said bonding bumps after thermal curing of said thermosetting resin film for bonding said bonding bumps to said bonding pads.
Dependencies are inferred from the claim text.