Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten

A semiconductor device, which comprises a silicon substrate;

• a metal interconnect with a line width of 0.2 μm or less composed of tungsten as a main constituent material and containing 0.05 at.% -18 at.% of molybdenum, formed on one principal side of the silicon substrate;
• and a capacitor component comprising a first electrode formed on the one principal side of the silicon substrate, an oxide film selected from the group consisting of tantalum oxide, barium strontium titanate (BST) and lead titante zirconate (PZT), formed in contact with the first electrode and a second electrode formed in contact with the oxide film.

A semiconductor device, which comprises a semiconductor substrate with a metal interconnect layer formed thereon;

• a memory LSI comprising a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity, formed in contact with the first electrode and a second electrode formed in contact with the oxide film;
• and a logic LSI comprising a MOS transistor with a gate oxide film and a gate electrode formed thereon, the memory LSI and the logic LSI being mounted on one principal side of the semiconductor substrate, characterized in that the main constituent material of the metal interconnect layer is tungsten and the metal interconnect layer contains molybdenum.

A semiconductor device, which comprises a memory LSI comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, and a logic LSI comprising a MOS transistor with a gate oxide film and a gate electrode formed thereon, the memory LSI and the logic LSI being mounted on one principal side of a silicon substrate with a metal interconnect layer formed thereon, characterized in that the main constituent material of the oxide film is a material selected from the group consisting of tantalum oxide, barium strontium titanate (BST) and lead titanate zirconate (PZT), the line width of the metal interconnect layer is 0.2 μm or less, the main constituent material of the metal interconnect layer is tungsten and the metal interconnect layer contains 0.05 at.% -18 at.% of molybdenum.