US 6,476,491 B2 · Semiconductor device having a multilayer wiring structure and pad electrodes protected from corrosion and method for fabricating the same

Abstract

The present invention provides a semiconductor device which can prevent the oxidization of the surfaces of pad electrodes to enhance the connecting strength between the pad electrodes and external terminals. The semiconductor device according to the present invention comprises pad electrodes for use in connecting external electrodes and a multilayer wiring structure connected to the pad electrodes, wherein one surface of an insulating layer covering the pad electrodes and having openings over the pad electrodes for exposing the surfaces of the pad electrodes is in contact with a metal layer. formed from one selected from precious metals and alloys containing the precious metals as main components.

Claims13

Dependent claims

A semiconductor device comprising

a semiconductor substrate,
an insulating layer formed on said semiconductor substrate,
a multilayer wiring structure buried in said insulating layer and comprising a multilayer wiring film and at least one via hole for connecting the layers of said multilayer wiring film to each other,
at least one pad electrode connected to said multilayer wiring structure, and
an insulating layer covering said at least one pad electrode and having at least one opening over said at least one pad electrode so as to expose the surface of said at least one pad electrode,
wherein one surface of said insulating layer is in contact with a metal layer formed from one selected from precious metals and alloys containing the precious metals as main components.

3 more elements

A method for fabricating a semiconductor device, comprising the steps of:

forming a multilayer wiring structure on a semiconductor substrate,
forming at least one pad electrode connected to said multilayer wiring structure,
forming an insulating layer so as to cover said at least one pad electrode,
forming at least one opening on said insulating layer so as to expose the surface of said pad electrode, and
forming an oxidation-preventive layer so as to cover the exposed surface of said pad electrode and the side wall of said opening, said oxidation-preventive layer being formed from one selected from precious metals and alloys containing said precious metals as main components.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device having a multilayer wiring structure and pad electrodes protected from corrosion and method for fabricating the same

Life of this patent

Semiconductor device having a multilayer wiring structure and pad electrodes protected from corrosion and method for fabricating the same

Life of this patent

Abstract

Claims13