Semiconductor integrated circuit device with capacitor formed under bonding pad

A semiconductor device, comprising:

• a semiconductor subswtr having a main surface;
• a plurality of bonding pads formed on an area of said main surface;
• a first conductive layer having a plurality of first conductive patterns formed on said main surface and arranged along the area;
• a second conductive layer having a plurality of second conductive patterns formed between said main surface and said first conductive layer and arranged along said area to overlap with said first conductive patterns;
• and
• an insulating layer disposed between said first and said second conductive layers, wherein only the first conductive layer has a plurality of via holes under the plurality of bonding pads and said first conductive patterns, said second conductive patterns, and said insulating layer from a plurality of capacitors.

A seniconductor device, comprising:

• a semiconductor substrate having a main surface;
• a plurality of bonding pads formed on an area of said main surface;
• a first wiring layer arranged between said main surface and said pads and grown along said area;
• a second wiring layer arranged between said main surface and said first wiring layer and along said area;
• and
• an insulating layer arranged between and in contact with said wiring layers, wherein only the first wiring layer has a plurality of via holes under the bonding pads and said first wiring layer, said second wiring layer, and said insulating layer form a plurality of capacitors under the bonding pads.

A semiconductor device having a plurality of bonding pads, coprising:

• a conductive semiconductor substrate having a main surface,
• an insulating layer formied on said main surface;
• and
• a MOS transistor having source/drain regions and a gate region, wherein
• the source/drain regions of the MOS transistor form a conductive active region in said seiconductor substrate;
• the gate region of the MOS transistor forms a conductive layer on said insulating layer,
• said conductive active region, said insulating layer, and said conductive layer are formed below the plurality of bonding pads, and only said conductive layer has a plurality of via holes under the bonding pads, and
• said active region, said insulating layer, and said conductive layer serve as a capacitor.

A semiconductor device having a plurality of bonding pads, compising:

• a conductive semiconductor substrate having a main surface;
• an insulating layer fored between said main surface and said conductive layer, only the conductive layer has a plurality of via holes under the bonding pads, and
• a MOS transistor having so drain regions and a gate region, wherein
• the gate region of the MOS transistor forms a conductive layer having a plurality of conductive patterns on said main surface;
• the source/drain regions of the MOS transistor form a plurality of conductive active regions in said semiconductor substrate;
• and
• the plurality of conduictive patems, the insulating layer, and the plurality of conductive active regions serve as a plurality of capacitors.