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US 6,476,456 B1Granted
Integrated radiation hardened power mosgated device and schottky diode
AssigneeInternational Rectifier Corporation
InventorMilton J. Boden, Jr.
Life of this patent
Estimating the term…
Abstract
A Schottky contact is formed in the area of a MOSgated device semiconductor device chip which is occupied by a source pad. The Schottky contact is formed by the direct contact of the aluminum source electrode to the silicon chip in the source area. A different barrier metal can be used for the Schottky. A guard ring diffusion surrounds the Schottky metal.
Claims13
A MOSgated device;
- said MOSgated device comprising a thin silicon chip having a top surface and a bottom surface;
- said top surface having an aluminum top contact extending over at least a major portion of said top surface and connected to source diffusions in said top surface;
- a portion of said aluminum top contact defining a contact pad surface area being in ohmic contact with the said top surface of said chip;
- and a barrier metal disposed beneath at least a portion of said contact pad surface area and connected thereto and further making a Schottky contact connection to the underlying silicon beneath said barrier metal.
1 more element
A radiation hardened MOSgated device and an integral, parallel connected Schottky device;
- said radiation hardened MOSgated device comprising a thin silicon chip having a top surface and a bottom surface;
- said top surface having an aluminum top contact extending over at least a major portion of said top surface and connected to source diffusions in said top surface, and a MOSgate structure including a late gate insulation structure for turning said MOSFET on and off;
- a portion of said aluminum top contact defining a contact pad surface area being in ohmic contact with the said top surface of said chip;
- and a barrier metal disposed beneath at least a portion of said contact pad surface area and connected thereto thereby making a Schottky contact connection to the underlying silicon beneath said barrier metal.
1 more element
Dependencies are inferred from the claim text.