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US 6,476,454 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKyoichi Suguro
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Abstract
Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating film and a gate electrode formed on the semiconductor substrate, source-drain regions formed in the semiconductor substrate, and a metal oxide layer formed selectively on the gate electrode. The gate electrode is formed of a first metal, and the metal oxide layer contains a second metal having a reduction amount of a Gibbs standard free energy in forming an oxide that is larger than that of the first metal.
Claims18
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating film formed on said semiconductor substrate and a gate electrode formed on said insulating film;
- source-drain regions formed in said semiconductor substrate;
- a metal oxide layer formed selectively on said gate electrode;
- and
- an interlayer insulating film formed of a silicon oxide film;
- wherein said gate electrode is formed of a first metal, and said metal oxide layer contains a second metal having a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal, and
- wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide that is larger than that of the material forming said interlayer insulating film.
5 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating film formed on said semiconductor substrate and a gate electrode formed on said insulating film;
- source-drain regions formed in said semiconductor substrate;
- a metal oxide layer formed selectively on said gate electrode;
- and
- an interlayer insulating film including a silicon oxide film;
- wherein said gate electrode is formed of a first metal, and said metal oxide layer contains a second metal having a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal, and
- wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide that is larger than that of the material forming said interlayer insulating film.
5 more elements
Dependencies are inferred from the claim text.