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US 6,476,452 B2Granted
Bipolar/BiCMOS semiconductor device
AssigneeNEC Corporation
InventorHisamitsu Suzuki
Life of this patent
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Abstract
An N type buried layer is buried in a P type silicon substrate. An N type epitaxial layer is formed on this buried layer. A P type intrinsic base region and an extrinsic base region are formed on the surface of the epitaxial layer. An N type emitter region is formed in the intrinsic base region. An emitter electrode is formed to contact the emitter region. A collector plug region is formed in an area separated from the extrinsic base region through a filed insulating film. A cobalt silicide film is formed on the extrinsic base region to surround the emitter electrode. An extrinsic base contact hole is formed at only one side of the emitter electrode. In the semiconductor device, the base resistance Rb and the collector-base capacity Ccb are reduced to make the maximum oscillation frequency fmax sufficiently large.
Claims15
A semiconductor device, comprising:
- a first conduction type semiconductor substrate;
- a second conduction type area formed on a surface of the semiconductor substrate;
- a first conduction type intrinsic base region formed on a surface of the second conduction type area;
- an extrinsic base region surrounding the intrinsic base region;
- a second conduction type emitter region formed in the intrinsic base region;
- an emitter electrode contacting the emitter region;
- a base electrode contacting the extrinsic base region on only one side of the emitter electrode;
- a second conduction type collector plug region formed in the second conduction type area;
- an element isolation area for isolating the first conduction type intrinsic base region and the extrinsic base region electrically from the second conduction type collector plug region;
- and
- a cobalt silicide film formed to surround the emitter electrode, as viewed from above, on the extrinsic base region, and formed to contact a surface of the second conduction type collector plug region.
8 more elements
A semiconductor device, comprising:
- a first conduction type semiconductor substrate;
- a second conduction type buried layer formed in the semiconductor substrate;
- a second conduction type epitaxial layer formed on the buried layer;
- a first conduction intrinsic base region formed on a surface of the epitaxial layer;
- an extrinsic base region surrounding the intrinsic base region;
- a second conduction type emitter region formed in the intrinsic base region;
- an emitter electrode contacting the emitter region;
- a base electrode contacting the extrinsic base region on only one side of the emitter electrode;
- a second conduction type collector plug region formed on the buried layer;
- an element isolation area for isolating the intrinsic base region and the extrinsic base region electrically from the conductor plug region;
- and
- a cobalt silicide film formed to surround the emitter electrode, as viewed from above, on the extrinsic base region, and formed to contact a surface of the second conduction type collector plug region.
9 more elements
A semiconductor device, comprising:
- a first conduction type semiconductor substrate;
- a second conduction type first and second well areas formed on a surface of the semiconductor substrate;
- a first conduction type third well area formed on the surface of the semiconductor substrate between the first and second well areas;
- a first conduction type MOS transistor formed in the first well area;
- a second conduction type MOS transistor formed on the third well area;
- and
- a bipolar transistor formed in the second well area, said bipolar transistor comprising
- a first conduction type intrinsic base region formed on the surface of the second well area,
- an extrinsic base region surrounding the intrinsic base region,
- a base electrode contacting the extrinsic base region on only one side of the emitter electrode;
- a second conduction type emitter region formed in the intrinsic base region,
- an emitter electrode contacting the emitter region, a second conduction type collector plug region formed in the second conduction type second well area,
- an element isolation area for isolating the first conduction type intrinsic base region and the extrinsic base region electrically from the second conduction type collector plug region, and
- a cobalt silicide film formed to surround the emitter electrode, as viewed from above, on the extrinsic base region, and formed to contact a surface of the second conduction type collector plug region.
11 more elements
A semiconductor device, comprising:
- a first conduction type semiconductor substrate;
- a second conduction type area formed on a surface of the semiconductor substrate;
- a pair of first conduction type intrinsic base regions formed on a surface of the second conduction type area;
- a first conduction type extrinsic base region formed to surround the intrinsic base regions as viewed from above;
- a second conduction type emitter region formed in the respective intrinsic base regions;
- a pair of emitter electrodes contacting the emitter region;
- at most two base electrodes contacting the extrinsic base region, each base electrode contacting the extrinsic base region on only one side of an emitter electrode;
- a collector plug region formed in the second conduction type area;
- an element isolation area for isolating the extrinsic base region electrically from the collector plug region;
- and
- a cobalt silicide film formed to surround the respective emitter electrodes, as viewed from above, on the extrinsic base region, and formed to contact a surface of the collector plug region.
8 more elements
Dependencies are inferred from the claim text.