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US 6,476,451 B2Granted
Buried guard rings for CMOS device
AssigneeWinbond Electronics Corp.
InventorShyh-Chyi Wong
Life of this patent
Estimating the term…
Abstract
A twin-well CMOS integrated circuit device includes an n-well region and a p-well region. Each of the n-well and p-well region includes spaced-apart regions which serve as drain and source regions, a channel region between the spaced-apart regions, a shallow trench isolation structure contiguous with one of the spaced-apart regions, and a doped diffused region extending from the surface of the well region, around and underneath the trench isolation structure, to a region beneath the contiguous spaced-apart region.
Claims9
A CMOS integrated circuit device, comprising:
- a semiconductor substrate;
- a first well region in said substrate, said first well region being of a first conductivity type and having disposed thereon
- first and second spaced-apart regions of a second conductivity type,
- a channel region between said first and second spaced-apart regions,
- a trench isolation structure contiguous with said first spaced-apart region, said trench isolation structure being dielectric, and
- a doped diffused region extending at least between a region underneath said trench isolation structure and a region underneath said first spaced-apart region;
- and
- a second well region in said substrate, said second well region being said second conductivity type and contiguous with said first well region.
5 more elements
A twin-well CMOS integrated circuit device, comprising
- a semiconductor substrate;
- a p-well region in said substrate, including
- first and second spaced-apart n-type regions;
- a channel region between said first and second spaced-apart regions;
- a first trench isolation structure contiguous with said first spaced-apart region, said first trench isolation structure being dielectric, and
- a p-type doped diffused region extending between at least a region underneath said first trench isolation structure and a region underneath said first spaced-apart region;
- and
- an n-well region contiguous with said p-well region, including
- third and fourth spaced-apart n-region;
- a channel region between said third and fourth spaced-apart regions;
- a second trench isolation structure contiguous with said third spaced-apart region, said second trench isolation structure being dielectric;
- and
- an n-type doped diffused region extending between at least a region underneath said second trench isolation structure and a region underneath said third spaced-apart region.
10 more elements
Dependencies are inferred from the claim text.