Nonvolatile memory device and method of manufacturing the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorBong Jo Shin
Life of this patent
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Abstract
A nonvolatile memory device includes: a first insulating film, a selection gate, a second insulating film and an erase gate layered on a semiconductor substrate; sidewalls formed in contact with both sides of the selection gate, the erase gate and the second insulating film; a third insulating film formed over an upper surface and an edge of the erase gate; a fourth insulating film formed on the surface of the semiconductor substrate in contact with the sidewalls; a floating gate overlapping the erase gate at a certain width; a dielectric film formed on the floating gate; a source/drain formed in the semiconductor below the floating gate and one of the sidewalls; and a control gate formed on the entire surface including the erase and floating gate.
Claims22
A nonvolatile memory device comprising:
- a selection gate and an erase gate insulated from each other and aligned with each other on a semiconductor substrate and layered in a first direction;
- a floating gate overlapping one side of the selection and the erase gates;
- and
- a control gate formed on an entire surface including the floating gate and the erase gate in a second direction, the second direction being perpendicular to the first direction.
A nonvolatile memory device comprising:
- a first insulating film, a selection gate, a second insulating film and an erase gate layered on a semiconductor substrate;
- sidewalls formed in contact with both sides of the selection and erase gates including the first and second insulating films;
- a third insulating film formed over an upper plane and upper edges of the erase gate;
- a fourth insulating film formed on a surface of the semiconductor substrate at both sides of the sidewalls;
- a floating gate overlapping one side of the erase gate at a certain width;
- a dielectric film formed on the floating gate;
- a source/drain aligned with the floating gate and at least one of the sidewalls, and formed on the surface of the semiconductor substrate;
- and
- a control gate formed on an entire surface including the erase gate and the floating gate.
A method of manufacturing a nonvolatile memory device, comprising:
- layering a first insulating film, a first conductive layer, a second insulating film and a second conductive layer on a semiconductor substrate;
- forming an erase gate having the second conductive layer and a selection gate having the first conductive layer in a first direction, by patterning the second conductive layer, the second insulating film, the first conductive layer and the first insulating film;
- forming sidewalls in contact with both sides of the layered selection gate and erase gate by forming a third insulating film on an entire surface including the selection and erase gate and etching back the third insulating film;
- forming a fourth insulating film over an upper plane and upper edges of the erase gate;
- forming a floating gate overlapping one side of the erase gate at a certain width by forming a third conductive layer on the fourth insulating film and patterning the third conductive layer;
- forming a fifth insulating film on the floating gate;
- forming source/drains in the surface of the semiconductor substrate using the floating gate and the erase gate including the sidewalls as masks;
- and
- forming a control gate in a second direction vertical to the floating and erase gates by forming a fourth conductive layer on the entire surface including the floating and erase gates and patterning the fourth conductive layer.
Dependencies are inferred from the claim text.