Microwave monolithic integrated circuit and fabrication process thereof
AssigneeFujitsu Quantum Devices Limited
InventorHajime Matsuda
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Abstract
A microwave monolithic integrated circuit comprises a T-shaped gate electrode including a Schottky gate electrode formed on a first region of a compound semiconductor substrate, a pair of ohmic electrodes making an ohmic contact with a surface of the substrate in the first region at respective sides of the T-shaped gate electrode, a lower capacitor electrode pattern formed on a second region of the compound semiconductor substrate with a composition substantially identical with a low-resistance, top electrode constituting the T-shaped gate electrode on the Schottky gate electrode, a dielectric film formed on the lower electrode pattern, and an upper electrode pattern formed on the dielectric film.
Claims7
A semiconductor device, comprising:
- a compound semiconductor substrate;
- a Schottky gate electrode formed on a first region of said compound semiconductor substrate with a first width;
- a low-resistance gate electrode formed on said Schottky gate electrode with a second, larger width, said low-resistance gate electrode forming, together with said Schottky gate electrode, a T-shaped gate electrode structure;
- a pair of ohmic electrodes making an ohmic contact with a surface of said compound semiconductor substrate in said first region at respective sides of said T-shaped gate electrode structure;
- a lower electrode pattern formed on a second region of said compound semiconductor substrate in direct contact with said surface of said compound semiconductor substrate, said lower electrode pattern having a composition substantially identical with a composition of said low-resistance gate electrode;
- a dielectric film formed on said lower electrode pattern;
- and
- an upper electrode pattern formed on said dielectric film,
- wherein said second region comprises a high-resistance region containing a p-type impurity element, and
- wherein said first region contains said p-type impurity element with a concentration level substantially identical with a concentration level of said p-type impurity element in said second region.
A microwave integrated circuit, comprising:
- a compound semiconductor substrate;
- an active device formed in a first region of said compound semiconductor substrate;
- a high-resistance part formed in a second, different region of said compound semiconductor substrate;
- and
- an interconnection pattern extending on the compound semiconductor substrate along said high-resistance part,
- said high-resistance part containing a p-type impurity element,
- said interconnection pattern comprising a Ti layer in contact with a surface of said compound semiconductor substrate directly and a low-resistance metal layer formed on said Ti layer.
Dependencies are inferred from the claim text.