Light emitting semiconductor device with partial reflection quantum-wave interference layers

A light-emitting semiconductor device having a quantum-wave interference layer with plural periods of a pair of a first layer and a second layer, said second layer having a wider band gap than said first layer, comprising:

• a plurality of partial quantum-wave interference layers, each of said partial quantum-wave interference layer having serial pairs of said first layer and said second layer with serial pairs of thicknesses of (nW1λW1/4, nB1λB1/4), . . . , (nWkλWk/4, nBkλBk/4), . . . , (nWjλWj/4, nBjλBj/4) where Ek+V and Ek, λWk and λBk, and nWk, nBk represent kinetic energy levels of carriers flowing into respective said first layer and said second layer, wavelengths of quantum-wave of carriers flowing into respective said first layer and said second layer, and odd numbers, respectively, and λWk and λBk are functions of Ek+V and Ek, respectively, and further comprising:
• an n-type layer;
• a p-type layer;
• an active layer formed between said n-type layer and said p-type layer;
• and
• wherein one of said n-type layer and said p-type layer is said quantum-wave interference layer.