Intersubband light emitting element
AssigneeTohoku University
InventorsHideo Ohno, Keita Ohtani
Life of this patent
Estimating the term…
Abstract
An intersubband light emitting element includes a semiconducting substrate, a first layer composed of a first semiconducting material, and a second layer composed of second semiconducting material. The first layer makes a heterojunction with the second layer. The top of a valence band of the first semiconducting material is higher in energy than the bottom of a conduction band of the second semiconducting material. The element further includes a third layer making a heterojunction with the first or second layer. The third layer has a superlattice structure. One of the first and second layer is provided on the semiconducting substrate directly or through at least one semiconducting layer.
Claims12
An intersubband light emitting element comprising:
- a semiconducting substrate;
- a first layer composed of a first semiconducting material;
- a second layer composed of a second semiconducting material and forming a heterojunction with said first layer, the top of a valence band of said second semiconducting material being higher in energy than the bottom of a conduction band of said first semiconducting material;
- and
- a third layer forming a heterojunction with one of said first and second layers and having a superlattice structure;
- wherein one of said first and second layer is provided on said semiconducting substrate directly or through at least one semiconducting layer;
- and
- wherein said intersubband light emitting element comprises a plurality of sets of said first and second layers, said sets each having a quantum well width of one of said first and second layers, said quantum well widths being different from each other among each of said sets.
An intersubband light emitting element comprising:
- a semiconducting substrate;
- a first layer composed of a first semiconducting material;
- a second layer composed of a second semiconducting material and forming a heterojunction with said second layer, the bottom of a conduction band of said second semiconducting material being higher in energy than that of said first semiconducting material;
- a third layer composed of a third semiconducting material which is the same as said first semiconducting material, and forming a heterojunction with said first layer;
- and
- a fourth layer composed of a fourth semiconducting material and forming a heterojunction with said third layer, the top of a valence band of said fourth semiconducting material being higher in energy than said the bottom of a conduction band of said second semiconducting material;
- wherein one of said first and fourth layers is provided on said semiconducting substrate directly or through at least one semiconducting layer.
An intersubband light emitting element comprising:
- a semiconducting substrate;
- a first layer composed of a first semiconducting material;
- a second layer composed of a second semiconducting material and making a heterojunction with said second layer, the top of a valence band of said second semiconducting material being lower in energy than that of said first semiconducting material;
- a third layer composed of a third semiconducting material which is the same as said first semiconducting material, said third layer forming a heterojunction with said first layer;
- and
- a fourth layer composed of a fourth semiconducting material and making a heterojunction with said third layer, the bottom of a conduction band of said fourth semiconducting material being lower in energy than the top of a valence band of said second semiconducting material;
- wherein one of said first and fourth layers is provided on said semiconducting substrate directly or through at least one semiconducting layer.
Dependencies are inferred from the claim text.