Surface state monitoring method and apparatus

A surface state monitoring apparatus comprising:

• a first infrared radiation condenser for condensing infrared radiation emitted by an infrared radiation source on an outer peripheral part of a substrate-to-be-monitored and introducing the infrared radiation into the substrate-to-be-monitored;
• an incident angle controller for controlling an incident angle of the infrared radiation condensed by the first infrared radiation condenser, which enters the substrate-to-be-monitored to be fixed to a prescribed value or to be variable;
• a second infrared radiation condenser for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored and exits the substrate-to-be-monitored;
• an infrared radiation detector for detecting the infrared radiation condensed by the second infrared radiation condenser;
• and
• an infrared radiation analyzer for analyzing the infrared radiation detected by the infrared radiation detector to measure contaminants staying on the surfaces of the substrate-to-be-monitored.

A surface state monitoring method comprising:

• condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored with an incident angle of the infrared radiation fixed to a required value or changed to introduce the infrared radiation into the substrate-to-be-monitored through the outer peripheral part;
• detecting the infrared radiation which has undergone internal multiple reflection in the substrate-to-be-monitored and exited the substrate-to-be-monitored;
• and
• analyzing the detected infrared radiation to measure contaminants staying on the surfaces of the substrate-to-be-monitored.

A surface state monitoring method comprising:

• condensing infrared radiation to an outer peripheral part of a substrate-to-be-monitored, scanning incident angles in a prescribed range to introduce the infrared radiation into the substrate-to-be-monitored through the outer peripheral part;
• detecting the infrared radiation which has undergone internal multiple reflection in the substrate-to-be-monitored and exited the substrate-to-be-monitored;
• and
• analyzing the detected infrared radiation to measure contaminants staying on the surfaces of the substrate-to-be-monitored.

A surface state monitoring method comprising:

• condensing infrared radiation to an outer peripheral part of a substrate-to-be-monitored with an incident angle fixed to a prescribed value or changed to introduce the infrared radiation into the substrate-to-be-monitored through the outer peripheral part;
• detecting the infrared radiation which has undergone internal multiple reflection in the substrate-to-be-monitored and exited the substrate-to-be-monitored;
• and
• comparing an intensity of the detected infrared radiation with a reference intensity, and it is judged whether the substrate-to-be-monitored is good or not, based on a result of the comparison.

A surface state monitoring method comprising:

• condensing infrared radiation to an outer peripheral part of a substrate-to-be-monitored with an incident angle fixed to a prescribed value or changed to introduce the infrared radiation into the substrate-to-be-monitored through the outer peripheral part;
• detecting selectively that of the infrared radiation having undergone internal multiple reflection in the substrate-to-be-monitored and exited the substrate-to-be-monitored, which is in a wavelength range corresponding to a molecular vibration of a specific contaminant;
• and
• computing an amount of the specific contaminant staying on the surfaces of the substrate-to-be-monitored, based on an intensity of the detected infrared radiation.