CMOS active pixel sensor using native transistors
AssigneeFoveon, Inc.
InventorsRichard B. Merrill, Tsung-Wen Lee
Life of this patent
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Abstract
An active pixel sensor including low threshold voltage transistors advantageously provides an increased output swing over an active pixel sensor of the prior art. The low threshold voltage transistor can be achieved using either a native transistor or a depletion mode transistor. In a process in which a threshold adjustment implant step is separately masked, the active pixel sensor of the present invention can be manufactured with no additional masking requirements. In one embodiment, a low threshold voltage (VTN) allows a transistor acting as a reset switch to operate in the linear region, and allowing the reset switch transistor to share a common supply voltage source with a readout amplifier transistor.
Claims4
An active pixel sensor (APS) comprising:
- a first transistor having a gate terminal, a drain terminal, and a source terminal, said drain terminal of said first transistor coupled to a first reference voltage source and said gate terminal of said first transistor coupled to receive a reset signal;
- a photodiode coupled between said source terminal of said first transistor and a second reference voltage source;
- and
- a second transistor having a gate terminal, a drain terminal, and a source terminal, said gate terminal of said second transistor coupled to said source terminal of said first transistor, and said drain terminal of said second transistor coupled to a drain voltage supply, wherein said first and second transistors are native transistors formed in a CMOS process.
An active pixel sensor (APS) comprising:
- a photodiode;
- and
- a plurality of transistors each having a gate terminal, a drain terminal, and a source terminal, said plurality of transistors configured to be able to reset said APS and to read out a signal representative of an integrated amount of light falling on said APS,
- wherein a first one of said plurality of transistors is an enhancement-mode N-type transistor formed in a first P-type doped region;
- and
- wherein a second one of said plurality of transistors is a native transistor formed in a second P-type doped region that has a dopant density less than a dopant density in said first P-type doped region, such that said second transistor has a threshold voltage closer to zero than to a threshold voltage of said first transistor.
Dependencies are inferred from the claim text.