Process for depositing a Ta2O5 dielectric layer
AssigneeFrance Telecom
InventorsMarc Berenguer, Roderick Devine
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Abstract
The process comprises the following steps: a) pretreatment of a surface of the substrate by means of a cold gas plasma at low or medium pressure in order to clean the said surface; b) growth, from the said cleaned surface of the substrate, of a nitride barrier layer by means of a cold gas plasma made up of an N2/H2 mixture at low or medium pressure; and c) deposition, on the nitride barrier layer, of a Ta2O5 dielectric layer by chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD).
Claims5
A process for depositing a tantalum oxide (Ta2O5) dielectric layer upon a semiconductor substrate, comprising:
- pre-treating a surface of the semiconductor substrate by means of a cold gas plasma carried out at a temperate of about room temperature and at a low or medium pressure between 10−4 and 1 torr during the pretreatment of the surface;
- growing a nitride barrier layer upon the semiconductor substrate by means of a cold gas plasma comprising a mixture of hydrogen and nitrogen carried out at a temperature of about room temperature and at a low or medium pressure between 10−3 and 10−2 torr during the growth of the nitride barrier;
- and
- depositing a tantalum oxide layer upon the nitride barrier layer by means of chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD);
- and
- wherein the semiconductor substrate comprises titanium, tungsten, aluminum, or copper.
Dependencies are inferred from the claim text.