Group III nitride compound semiconductor thin film and deposition method thereof, and semiconductor device and manufacturing method thereof

A deposition method of a Group III nitride compound semiconductor thin film, the method comprising steps of:

• depositing, on a substrate, a poly-crystalline Group III nitride compound semiconductor thin film comprising at least one Group III element and nitrogen (N);
• and
• removing a lattice defect which occurs in the poly-crystalline Group III nitride compound semiconductor thin film, by irradiating the poly-crystalline Group III nitride compound semiconductor thin film deposited on the substrate with a pulsed laser.

A deposition method of a Group III nitride compound semiconductor thin film, the method comprising steps of:

• depositing, on a substrate, a single-crystal Group III nitride compound semiconductor thin film comprising at least one Group III element and nitrogen (N);
• and
• removing a lattice defect which occurs in the single-crystal Group III nitride compound semiconductor thin film, by irradiating the single-crystal Group III nitride compound semiconductor thin film deposited on the substrate with a pulsed laser.

A manufacturing method of a semiconductor device comprising a Group III nitride compound semiconductor layer comprising at least one Group III element and nitrogen (N),

• wherein a poly-crystalline Group III nitride compound semiconductor layer is deposited on a substrate by sputtering using a target comprised of a Group III nitride compound in a plasma atmosphere of gas comprising at least nitrogen.

A manufacturing method of a semiconductor device comprisirg a Group III nitride compound semiconductor layer comprising at least one Group III element and nitrogen (N), the method comprising steps of:

• depositing, on a substrate, a poly-crystalline Group III nitride compound semiconductor layer comprising at least one Group III element and nitrogen;
• and
• removing,a lattice defect which occurs in the poly-crystalline Group III nitride compound semiconductor layer, by irradiating the poly-crystalline Group III nitride compound semiconductor layer deposited on the substrate with a pulsed laser.

A manufacturing method of a semiconductor device comprising a Group III nitride compound semiconductor layer comprising at least one Group III element and nitrogen (N), the method comprising steps of

• depositing, on a substrate, a single-crystal Group III nitride compound semiconductor layer comprising at least one Group III element and nitrogen;
• and
• removing a lattice defect which occurs in the single-crystal Group III nitride compound semiconductor layer, by irradiating the single-crystal Group III nitride compound semiconductor layer deposited on the substrate with a pulsed laser.