Plasma treatment apparatus and plasma treatment method

A plasma treating method, comprising the steps of;

• introducing first high frequency waves to a plasma treating chamber,
• growing a plasma in the treating chamber by the introduced first high frequency waves,
• plasma treating an article to be treated, and
• controlling the amount of dissociated radicals in the plasma with treating time.

A dry etching system comprising:

• a plasma treating chamber for maintaining a plasma atmosphere;
• a workpiece support member adapted for supporting the workpiece to be processed at a position within said plasma treating chamber;
• a gas introducing port located in said plasma treating chamber;
• a gas flow controller for controlling a process gas, connected to said gas introducing port;
• an emission spectralizer for monitoring optical emission of an etchant and a reaction product in said plasma atmosphere;
• and
• a computer electrically connected to said emission spectralizer and said gas flow controller;
• wherein
• said gas flow controller is controlled by said computer on the basis of an intensity ratio of optical emission measured by said emission spectralizer.