Method for forming damascene type of metal wires in semiconductor devices
AssigneeHyundai Electronics Industries Co., Ltd.
InventorHeon-Do Kim
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Abstract
There is provided a method for forming damascene type of metal wire in a semiconductor device, which can improve the step coverage of seed layer in the metal wire process using copper and can also improve the orientation and binding force of the electric plated copper layer. The method includes the steps of depositing a copper thin layer by physical vapor deposition within damascene type of contact hole and trench for line, forming a seed layer by chemical vapor deposition, and then depositing copper for main wire by electric plating, wherein the copper layer deposited by physical vapor deposition can improve the orientation and the binding force of copper seed layer deposited later by Cu CVD. The step coverage of the seed layer can be also improved due to chemical vapor deposition.
Claims15
A method for forming a damascene type metal wiring in a semiconductor device, the method comprising the steps of:
- forming an entire structure including an interlayer insulating layer over a predetermined lower conductive layer;
- patterning the interlayer insulating layer to form a contact hole and a trench;
- depositing a first copper layer along the surface of the entire structure by physical vapor deposition;
- depositing a second copper layer for a seed layer along the surface of the first copper layer by chemical vapor deposition;
- forming a third copper layer for a main wire of the metal wiring by electric plating;
- and,
- polishing the third, second and first copper layers until the interlayer insulating layer is exposed.
A method of forming a damascene type metal wiring in a semiconductor device, the method comprising the steps of:
- forming an entire structure including an interlayer insulating layer over a predetermined lower conductive layer;
- patterning the interlayer insulating layer to form a contact hole and a trench;
- depositing a first copper layer along the surface of the entire structure by physical vapor deposition;
- depositing a second copper layer on the surface of the first copper layer by chemical vapor deposition, wherein the contact hole and trench are buried with the second copper layer;
- forming a third copper layer by electric plating;
- and,
- polishing the third, second, and first copper layers until the interlayer insulating layer is exposed.
Dependencies are inferred from the claim text.