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US 6,475,912 B1Granted
Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorTakeshi Harada
Life of this patent
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Abstract
The semiconductor device of the present invention includes: a substrate; a first conductor film supported by the substrate; an insulating film formed on the substrate to cover the first conductor film, an opening being formed in the insulating film; and a second conductor film, which is formed within the opening of the insulating film and is in electrical contact with the first conductor film. The second conductor film includes: a silicon-containing titanium nitride layer formed within the opening of the insulating film; and a metal layer formed over the silicon-containing titanium nitride layer. The metal layer is mainly composed of copper.
Claims14
A method for fabricating a semiconductor device, comprising the steps of:
- a) forming a first conductor film on a substrate;
- b) depositing an insulating film over the substrate to cover the first conductor film;
- c) forming an opening in the insulating film such that at least part of the opening reaches the first conductor film;
- and
- d) forming a second conductor film within the opening of the insulating film,
- wherein the step d) comprises the steps of:
- depositing a silicon-containing titanium nitride layer by a chemical vapor deposition process to cover the inner sidewall and bottom of the opening of the insulating film;
- bombarding the surface of the silicon-containing titanium nitride layer with ions to increase the density of the portion of the silicon-containing titanium nitride layer formed on the bottom of the opening of the insulating film;
- and
- depositing a metal layer on the surface of the bombarded silicon-containing titanium nitride layer,
- wherein the thickness of the portion of the bombarded silicon-containing titanium nitride layer formed on the bottom of the opening of the insulating film is less than the thickness of the portion of the bombarded silicon-containing titanium nitride layer formed on the inner sidewall.
8 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- a) forming a first conductor film on a substrate;
- b) depositing an insulating film over the substrate to cover the first conductor film;
- c) forming an opening in the insulating film such that at least part of the opening reaches the first conductor film;
- and
- d) forming a second conductor film within the opening of the insulating film, wherein the step d) comprises the steps of:
- depositing a titanium nitride layer by a chemical vapor deposition process to cover the inner sidewall and bottom of the opening of the insulating film;
- bombarding the surface of the titanium nitride layer with ions;
- exposing the surface of the titanium nitride layer to a silicon compound to form a silicon-containing titanium nitride layer;
- and
- depositing a metal layer on the surface of the silicon-containing titanium nitride layer.
7 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- a) forming a first conductor film on a substrate;
- b) depositing an insulating film over the substrate to cover the first conductor film;
- c) forming an opening in the insulating film such that at least part of the opening reaches the first conductor film;
- and
- d) forming a second conductor film within the opening of the insulating film, wherein the step d) comprises the steps of:
- depositing a titanium nitride layer by a chemical vapor deposition process to cover the inner sidewall and bottom of the opening of the insulating film;
- bombarding the surface of the titanium nitride layer with ions;
- exposing the surface of the titanium nitride layer to a silicon compound for diffusion of silicon produced by the silicon compound, in the titanium nitride layer, thereby to form a silicon-containing titanium nitride layer;
- continue exposing the surface of the silicon-containing titanium nitride layer to the silicon compound for deposition of silicon produced by the silicon compound, on the surface of the silicon-containing titanium nitride layer, to form a silicon layer;
- and
- depositing a metal layer on the surface of the silicon layer.
8 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- a) forming a first conductor film on a substrate;
- b) depositing an insulating film over the substrate to cover the first conductor film;
- c) forming an opening in the insulating film such that at least part of the opening reaches the first conductor film;
- and
- d) forming a second conductor film within the opening of the insulating film, wherein the step d) comprises the steps of:
- depositing a carbon-containing metal nitride layer by a chemical vapor deposition process to cover the inner sidewall and bottom of the opening of the insulating film;
- bombarding the surface of the carbon-containing metal nitride layer with ions;
- thereby dissociating a carbon contained in the carbon-containing metal nitride layer into a vapor;
- and
- depositing a metal layer on the surface of the bombarded carbon-containing metal nitride layer,
- wherein the thickness of the portion of the bombarded carbon-containing metal nitride layer formed on the bottom of the opening of the insulating film is less than the thickness of the portion of the bombarded carbon-containing metal nitride layer formed on the inner sidewall,
- and wherein the concentration of carbon of the portion of the bombarded carbon-containing metal nitride layer formed on the bottom of the opening of the insulating film is lower than the concentration of carbon of the portion of the bombarded carbon-containing metal nitride layer formed on the inner sidewall.
9 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- a) forming a first conductor film on a substrate;
- b) depositing an insulating film over the substrate to cover the first conductor film;
- c) forming an opening in the insulating film such that at least part of the opening reaches the first conductor film;
- and
- d) forming a second conductor film within the opening of the insulating film, wherein the step d) comprises the steps of:
- depositing a metal nitride layer by a chemical vapor deposition process to cover the inner sidewall and the bottom of the opening of the insulating film;
- bombarding the surface of the metal nitride layer with ions;
- exposing the surface of the metal nitride layer to a silicon compound to form a metal nitride silicide layer;
- and
- depositing a metal layer on the surface of the metal nitride silicide layer.
7 more elements
Dependencies are inferred from the claim text.