Method of forming noble metal pattern
AssigneeMicron Technology, Inc.
InventorRichard H. Lane
Life of this patent
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Abstract
A process for high resolution patterning of noble metals, such as platinum, for forming various semiconductor devices, such as capacitors or wiring patterns, is disclosed. A layer of noble metal, which will form an upper electrode of a capacitor, is formed over a dielectric layer. A mask layer is then formed over the noble metal layer and patterned to leave a portion of the noble metal layer exposed. The portion of the exposed noble metal is subsequently converted to its silicide, the noble metal silicide is then etched and the dielectric layer is removed, leaving the noble metal layer patterned in an upper electrode of an IC capacitor.
Claims45
A method of forming a semiconductor device, comprising the steps of:
- forming a metal layer over an insulating layer provided over a semiconductor substrate, said metal layer comprising a material selected from the group consisting of platinum, iridium, iridium oxide, ruthenium, ruthenium oxide, rhodium, osmium, osmium oxide, silver and gold;
- forming a protective layer over at least one portion of said metal layer, leaving at least another portion of said metal layer exposed;
- converting said at least another portion of said metal layer exposed to a metal silicide;
- and
- removing said metal silicide.
A method of forming an upper capacitor electrode on a semiconductor substrate, comprising the steps of:
- forming a dielectric layer over a lower capacitor electrode provided over said semiconductor substrate, said dielectric layer comprising a material selected from the group consisting of ferroelectric materials and high-dielectric constant materials;
- forming a metal layer over said dielectric layer;
- forming a protective layer over portions of said metal layer, leaving at least other portions of said metal layer exposed;
- converting to a metal silicide at least one of said exposed portions of said metal layer;
- and
- removing said metal silicide.
A method of forming an upper capacitor electrode on a semiconductor substrate, comprising the steps of:
- forming a dielectric layer over a lower capacitor electrode provided over said semiconductor substrate;
- forming a platinum layer over said dielectric layer;
- forming a protective layer over portions of said platinum layer, leaving at least other portions of said platinum layer exposed;
- converting to a platinum silicide at least one of said exposed portions of said platinum layer;
- and
- removing said platinum silicide.
A method of forming an upper capacitor electrode on a semiconductor substrate, comprising the steps of:
- forming a dielectric layer over a lower capacitor electrode provided over said semiconductor substrate;
- forming a metal layer over said dielectric layer, said metal layer comprising a material selected from the group consisting of platinum, iridium, iridium oxide, ruthenium, ruthenium oxide, rhodium, osmium, osmium oxide, silver and gold;
- forming a protective layer over portions of said metal layer, leaving at least other portions of said metal layer exposed;
- converting to a metal silicide at least one of said exposed portions of said metal layer;
- and
- removing said metal silicide.
Dependencies are inferred from the claim text.