Method for manufacturing a metal interconnection having enhanced filling capability
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSung-Kwon Lee
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Abstract
A method for manufacturing a metal interconnection includes the steps of, preparing an active matrix provided with a substrate, an insulating layer and an opening formed through the insulating layer, forming a diffusion barrier layer on surfaces of the opening and the insulating layer, forming a protection layer on the diffusion barrier layer, forming a first metal layer into the opening and upon the protection layer, forming a second metal layer on the first metal layer, and polishing back the first and the second metal layer to a top surface of the insulating layer, thereby forming a metal interconnection.
Claims8
A method for forming a metal interconnection comprising the steps of:
- a) preparing an active matrix, an insulating layer over the active matrix, and an opening in the insulating layer;
- b) forming a diffusion barrier layer covering the opening and the insulating layer;
- c) forming a protection layer over the diffusion barrier layer, wherein said protection layer includes a material selected from zinc (Zn), magnesium (Mg), or zirconium (Zr);
- d) forming a first metal layer covering the opening and the protection layer;
- e) forming a second metal layer over the first metal layer;
- and
- f) polishing the first and second metal layers for at least partially exposing the insulating layer, to form a metal interconnection.
Dependencies are inferred from the claim text.